Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-VT, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets

Authors :: V. Peña
Romain Ritzenthaler
D. Jang
X. Zhou
G. Mannaert
T. Miyashita
A. Oliveira
K. Kenis
A. Veloso
Gaetano Santoro
Adrian Chasin
Farid Sebaai
Lin Yongjing
J. Machillot
K. Devriendt
Eddy Simoen
Naoto Horiguchi
Naomi Yoshida
T. Hopf
O. Richard
Hans Mertens
S.-C. Chen
J. Versluijs
Min-Soo Kim
Source :: Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Publication Year :: 2019
Publisher :: The Japan Society of Applied Physics, 2019.

Subjects :: Materials science
business.industry
Vertical distance
Optoelectronics
business
Metal gate
Nanosheet

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........7a83132858be492f12351a8df63aa80a

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