Study of low energy implants for ultrashallow junctions using thermal wave and optical techniques

A combination of the thermal wave and optical technologies was found to be advantageous in characterization of implants for ultrashallow junctions. Two sets of Si wafers implanted with boron and arsenic ions at low energies (0.5–5.0 keV) and high dose (5×1014 cm−2) were studied after implantation and prior to annealing. Signals obtained by using the thermal wave and optical methods exhibit a linear dependence on implantation energy below 2 keV for both implants. Results of the thermal wave and optical studies were also correlated to conventional TRIM calculations of crystalline damage and implanted ion concentration.