Superluminescence from optically pumped Cd<formula><roman>x</roman></formula>Hg<formula><roman>1-x</roman></formula>Te heterostructures on GaAs and Si substrates

grown on GaAs andKeywords : Superlum inescence, stimulated emission, heterostructures, optical pumping, narrow gap semiconductorsThere has been increasing interest in developing semiconductor lasers that operate in the 1 .5 -- .tm wavelength range and,jim, 8&#247;12 pin). intraband cascade lasers andinterband lasers using type-IT heterostructures (e.g TnAs/TnGaSb/TnAs system) (see, e.g., [1 ,2]) are the main candidates forHeterostructures based on CdHgjTe system where direct radiative transitions are allowed, could be also a good candidatefabrication technology of CdHgjTe structures, caused by a need for development of advanced infrared detectors and