Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations

MLA

Sara Kochoska, et al. “Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations.” Materials Science Forum, vol. 1062, May 2022, pp. 554–59. EBSCOhost, https://doi.org/10.4028/p-nc73ur.

APA

Sara Kochoska, Martin Domeij, Swapna Sunkari, Joshua Justice, Hrishikesh Das, Thanh Toan Pham, Jimmy Franchi, Sotirios Maslougkas, Ho Jung Lee, Xue Qing Hu, & Thomas Neyer. (2022). Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations. Materials Science Forum, 1062, 554–559. https://doi.org/10.4028/p-nc73ur

Chicago

Sara Kochoska, Martin Domeij, Swapna Sunkari, Joshua Justice, Hrishikesh Das, Thanh Toan Pham, Jimmy Franchi, et al. 2022. “Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations.” Materials Science Forum 1062 (May): 554–59. doi:10.4028/p-nc73ur.