Photoluminescence study of InGaN site-controlled nanostructures formed by selective area epitaxy

Authors :: Pei-Cheng Ku
Taeil Jung
L. K. Lee
Source :: LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society.
Publication Year :: 2008
Publisher :: IEEE, 2008.
Abstract: We studied photoluminescence of InGaN site-controlled nanostructures formed by selective area epitaxy. We developed a theoretical model for the nanoscale growth evolution and used this model for the optimization of optical qualities of InGaN nanostructures.

Subjects :: Photoluminescence
Nanostructure
Materials science
business.industry
Wide-bandgap semiconductor
Gallium nitride
chemistry.chemical_compound
Selective area epitaxy
chemistry
Evolution biology
Optical materials
Optoelectronics
business
Nanoscopic scale

Database :: OpenAIRE
Journal :: LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society
Accession number :: edsair.doi...........79d7f08079b8e66dbe9626db2895a4aa
Full Text :: https://doi.org/10.1109/leos.2008.4688676

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