Common-Base Operation of GaN Bipolar Junction Transistors

Authors :: S. N. G. Chu
A. M. Wowchack
Peter Chow
J. M. Van Hove
Fan Ren
D.J King
C. J. Polley
C. R. Abernathy
Xian-An Cao
A. P. Zhang
J. J. Klaassen
Stephen J. Pearton
G. T. Dang
Source :: Electrochemical and Solid-State Letters. 3:333
Publication Year :: 1999
Publisher :: The Electrochemical Society, 1999.

Subjects :: Materials science
Heterostructure-emitter bipolar transistor
business.industry
Electrical junction
General Chemical Engineering
Heterojunction bipolar transistor
Bipolar junction transistor
Transistor
law.invention
Current injection technique
law
Electrochemistry
Optoelectronics
General Materials Science
Field-effect transistor
Silicon bandgap temperature sensor
Electrical and Electronic Engineering
Physical and Theoretical Chemistry
business

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