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Improved effective channel electron velocity in AlGaN/GaN HEMTs with sub-100 nm gate-to-drain distance

Authors :
Kazuki Kodama
Y. Naito
Masaaki Kuzuhara
Hirokuni Tokuda
Source :
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Publication Year :
2012
Publisher :
The Japan Society of Applied Physics, 2012.

Subjects

Subjects :
Materials science
business.industry
Optoelectronics
Algan gan
business
Electron velocity
Communication channel

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........79bdc06ec496d80b08a73dfc4b285dba
Full Text :
https://doi.org/10.7567/ssdm.2012.f-2-4
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