Investigation of heavy-ion strikes on a fin field-effect transistor-based low-noise amplifier

MLA

K. K. Nagarajan, et al. “Investigation of Heavy-Ion Strikes on a Fin Field-Effect Transistor-Based Low-Noise Amplifier.” Semiconductor Science and Technology, vol. 35, Nov. 2020, p. 125028. EBSCOhost, https://doi.org/10.1088/1361-6641/abc1fe.

APA

K. K. Nagarajan, P. Rajendiran, & R. Srinivasan. (2020). Investigation of heavy-ion strikes on a fin field-effect transistor-based low-noise amplifier. Semiconductor Science and Technology, 35, 125028. https://doi.org/10.1088/1361-6641/abc1fe

Chicago

K. K. Nagarajan, P. Rajendiran, and R. Srinivasan. 2020. “Investigation of Heavy-Ion Strikes on a Fin Field-Effect Transistor-Based Low-Noise Amplifier.” Semiconductor Science and Technology 35 (November): 125028. doi:10.1088/1361-6641/abc1fe.