Numerical analysis of a cylindrical thin-pillar transistor (CYNTHIA)

The authors have analyzed the characteristics of a cylindrical thin-pillar transistor, (CYNTHIA), which is a vertical MOS transistor with a cylindrical gate electrode surrounding a submicrometer-diameter silicon pillar. The device characteristics are calculated by solving Poisson's equation in cylindrical coordinates. Results showed that CYNTHIA has three superior features: excellent subthreshold characteristics, enhanced electron mobility, and increased sheet electron concentration. These superior characteristics result in a feature size twice that of vertical SOI transistors, The authors' calculation is that CYNTHIA is quite an attractive device design for future ultra-high-density LSIs. >