The photoluminescence spectra of thin Si-doped GaAs layers grown by MBE

Free and bound excitons and (D, A) recombination related luminescence of selectively doped MBE grown GaAs structures, consisting of GaAs: Si layers sandwiched between undoped buffer and cap layers, are studied in dependence on the doped layer thickness. The observed changes in luminescence intensity are explained by a model assuming the dominant contribution of the Si-doped layers of effective thickness exceeding several times their nominal thickness. The systematic shift in position of the (e, A) line with increasing thickness of the doped layer is explained by the shift of the Fermi energy due to the Si donors. [Russian Text Ignored.]