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The role of MOVPE in the manufacture of high performance InP based optoelectronic devices

Authors :
W.J. Devlin
S. Cole
Andrew William Nelson
R.H. Walling
M.J. Harding
R.H. Moss
P.C. Spurdens
D.M. Cooper
M. J. Robertson
S. Wong
Source :
Journal of Crystal Growth. 93:792-802
Publication Year :
1988
Publisher :
Elsevier BV, 1988.

Abstract

This paper describes, for the first time, the development of atmospheric pressure MOVPE growth for the large scale production of InP based opto-electronic devices. Results are presented on material quality, large area uniformity, device performance, yield and reliability, both in an R&D environment and in the production facility to demonstrate that InP based MOVPE technology has now made the crucial transition from the research and development area into large scale production.

Details

ISSN :
00220248
Volume :
93
Database :
OpenAIRE
Journal :
Journal of Crystal Growth
Accession number :
edsair.doi...........7901139304369854961e6c3991454ce2
Full Text :
https://doi.org/10.1016/0022-0248(88)90621-5