Monte Carlo simulation of electron heating in a one-dimensional GaAs-quantum conductor

The process of transport of one-dimensional electrons in a GaAs quantum conductor is investigated by the Monte Carlo method. It is shown that in addition to scattering by polar optical phonons, the heating of charge carriers is also appreciably affected, in the case of electric field intensities higher than 5.105V/m, by ionized-impurity scattering and the transverse dimensions of the conductor.