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High slew rate and low output resistance class-AB flipped voltage follower cell with increased current driving capability
- Source :
- Sādhanā. 45
- Publication Year :
- 2020
- Publisher :
- Springer Science and Business Media LLC, 2020.
-
Abstract
- The paper proposes a class-AB flipped voltage follower (FVF) cell, in which the bulk-driven transistor is used as an input transistor with a replica-biased scheme to eliminate the DC level shift while a cascoding transistor is used to reduce the output resistance. The proposed FVF cell has several advantages such as low output resistance, approximately unity voltage gain, high symmetrical slew rate, high current sourcing capability, high current sinking capability and wide bandwidth. The proposed FVF cell has been simulated in Cadence Virtuoso Analog Design Environment using BSIM3v3 180 nm CMOS technology with a power supply voltage of 1.2 V.
- Subjects :
- Multidisciplinary
business.industry
Computer science
020208 electrical & electronic engineering
Transistor
Electrical engineering
Buffer amplifier
020206 networking & telecommunications
Slew rate
Hardware_PERFORMANCEANDRELIABILITY
02 engineering and technology
law.invention
CMOS
law
Hardware_INTEGRATEDCIRCUITS
0202 electrical engineering, electronic engineering, information engineering
Bandwidth (computing)
Current (fluid)
business
Cadence
Voltage
Subjects
Details
- ISSN :
- 09737677 and 02562499
- Volume :
- 45
- Database :
- OpenAIRE
- Journal :
- Sādhanā
- Accession number :
- edsair.doi...........788d4df5b072cf55a71f776c6cb93722