A magnetosensitive dual-emitter dual-base transistor

A dual-emitter dual-base magnetotransistor (DEDBMT) with an accelerating electrical field between both bases is reported. The magnetosensitivity of the device is based on galvanomagnetic effects in the bulk of the DEDBMT and the influence of these effects on the electrical interaction of the emitters. An applied magnetic field changes the injection currents of the emitters and as a result the collector current also changes. The device exhibits a high magnetosensitivity, which may be varied in a wide range.