Band offset and leakage current in fluorine doped Si/HfO2/SiO2 gate stack of metal oxide semiconductor field effect transistors: An ab initio investigation

Subjects

Subjects :

Materials Chemistry
Metals and Alloys
Surfaces and Interfaces
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials

Details

ISSN :

00406090

Volume :

746

Database :

OpenAIRE

Journal :

Thin Solid Films

Accession number :

edsair.doi...........77a896c02d8df7de729707dfbd34e66e

Full Text :

https://doi.org/10.1016/j.tsf.2022.139116