On the feasibility of further improving Figure of Merits (FOM) of low voltage power MOSFETs

Authors :: Z. John Shen
Gourab Sabui
Source :: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Publication Year :: 2014
Publisher :: IEEE, 2014.
Abstract: A new low voltage power MOSFET concept termed the Junction Enhanced Trench Field Effect Transistor (JETFET) is proposed which combines the advantages of high cell density of trench MOSFET, low gate charge of LDMOS, and low drift region resistance of superjunction MOSFET. The JETFET concept was investigated using 2D process and device TCAD simulation. The feasibility of further improving the Figure of Merits (FOM) of power MOSFETs is demonstrated.

Subjects :: LDMOS
Engineering
Trench mosfet
business.industry
Trench
MOSFET
Electrical engineering
High cell
Field-effect transistor
Power MOSFET
business
Low voltage

Database :: OpenAIRE
Journal :: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Accession number :: edsair.doi...........776f59c1baf7d397a9e47bb2ecb17147
Full Text :: https://doi.org/10.1109/ispsd.2014.6855999

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