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Comparison of Phase Shifting Techniques for Measuring In-Plane Residual Stress in Thin, Flat Silicon Wafers
- Source :
- Journal of Electronic Materials. 42:2478-2485
- Publication Year :
- 2013
- Publisher :
- Springer Science and Business Media LLC, 2013.
-
Abstract
- This paper reports on a comparison of the six- and ten-step phase shifting methods in digital transmission photoelasticity and the application of these methods to obtain the residual stresses in thin (200 μm), flat crystalline silicon wafers (156 mm square). The ten-step phase shifting technique is judged to be superior with reduced noise in the isoclinics and a resulting higher accuracy when dealing with the near-zero retardation prevalent in residual stress measurements of silicon wafers.
- Subjects :
- Photoelasticity
Materials science
Solid-state physics
business.industry
Condensed Matter Physics
Noise (electronics)
Electronic, Optical and Magnetic Materials
In plane
Optics
Photovoltaics
Residual stress
Materials Chemistry
Wafer
Crystalline silicon
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 42
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........774d0e662027a211c1e8bd635cb3f185