Accurate Measurement of Sneak Current in ReRAM Crossbar Array with Data Storage Pattern Dependencies

In this paper, readout scheme in ReRAM crossbar array based on sneak current compensation is introduced. This scheme consists of two cycles. In the first measurement cycle, an accurate sneak current is measured which is dependent on the data storage patterns of the crossbar arrays in which the selector ON/OFF ratio is not large enough. In the second cycle, the measured sneak current is subtracted from the total bit line current to predict the cell current accurately. To make the measured sneak current accurate, the crossbar array is divided into many blocks only in one direction so that the impact of array size increase is minimal. The scheme is validated by using HSPICE.