Using single source precursors and spray chemical vapor deposition to grow thin-film CuInS/sub 2/ [solar cells]

Authors :: D. Hehemann
J.A. Hollingsworth
Aloysius F. Hepp
Ryne Raffaelle
J.E. Cowen
J.D. Harris
Source :: Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: Solar cell thin films of CuInS/sub 2/ were deposited on fused silica, stainless steel, Kapton/sup TM/ and polybenzobisoxazole using the single source organometallic precursor (PPh/sub 3/)/sub 2/CuIn(SEt)/sub 4/, in conjunction with spray chemical vapor deposition. Films were deposited at temperatures ranging from 325-360/spl deg/C. As deposited, the films had a thickness on the order of 200 /spl Aring/. The grain structure of the films was found to vary with carrier gas flow rate and substrate temperature.

Subjects :: Materials science
Sputtering
law
Solar cell
Analytical chemistry
Substrate (electronics)
Chemical vapor deposition
Thin film
Grain structure
Volumetric flow rate
Kapton
law.invention

Database :: OpenAIRE
Journal :: Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
Accession number :: edsair.doi...........76f34440f7ba86b0a8c84262b7676b6e
Full Text :: https://doi.org/10.1109/pvsc.2000.915900

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