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Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy

Authors :
James S. Harris
P. Krispin
K. H. Ploog
S.G. Spruytte
Source :
Journal of Applied Physics. 90:2405-2410
Publication Year :
2001
Publisher :
AIP Publishing, 2001.

Abstract

The electrical admittance of rectifying metal–semiconductor contacts on n-type GaAs/Ga(As, N)/GaAs heterostructures depends strongly on frequency and temperature. The distinct dispersion is due to the relatively high diffusion barrier around the Ga(As, N) layer. As long as the admittance is controlled by electrons inside the Ga(As, N) layer, their response to the ac electric field is dependent on frequency and temperature. Under appropriate conditions, capacitance–voltage measurements can be used to examine depth-resolved electrical characteristics of n-type GaAs/Ga(As, N)/GaAs heterostructures. The experimental depth profiles of the carrier concentration are compared with calculations based on self-consistent solutions of the Poisson equation. For 3% GaN mole fraction, the conduction band offset between GaAs and Ga(As, N) is found to be −(0.40±0.01) eV, i.e., about 95% of the total band gap difference. The heterointerfaces are of type I. At the Ga(As, N)-on-GaAs interface, negative charges of about 1.3×1...

Details

ISSN :
10897550 and 00218979
Volume :
90
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........76acde9917bf62664c65355796e715ef
Full Text :
https://doi.org/10.1063/1.1391218