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Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy
- Source :
- Journal of Applied Physics. 90:2405-2410
- Publication Year :
- 2001
- Publisher :
- AIP Publishing, 2001.
-
Abstract
- The electrical admittance of rectifying metal–semiconductor contacts on n-type GaAs/Ga(As, N)/GaAs heterostructures depends strongly on frequency and temperature. The distinct dispersion is due to the relatively high diffusion barrier around the Ga(As, N) layer. As long as the admittance is controlled by electrons inside the Ga(As, N) layer, their response to the ac electric field is dependent on frequency and temperature. Under appropriate conditions, capacitance–voltage measurements can be used to examine depth-resolved electrical characteristics of n-type GaAs/Ga(As, N)/GaAs heterostructures. The experimental depth profiles of the carrier concentration are compared with calculations based on self-consistent solutions of the Poisson equation. For 3% GaN mole fraction, the conduction band offset between GaAs and Ga(As, N) is found to be −(0.40±0.01) eV, i.e., about 95% of the total band gap difference. The heterointerfaces are of type I. At the Ga(As, N)-on-GaAs interface, negative charges of about 1.3×1...
- Subjects :
- Materials science
Admittance
Condensed matter physics
Diffusion barrier
business.industry
Band gap
Wide-bandgap semiconductor
General Physics and Astronomy
Heterojunction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gallium arsenide
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
Electric field
Optoelectronics
business
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 90
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........76acde9917bf62664c65355796e715ef
- Full Text :
- https://doi.org/10.1063/1.1391218