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Electrical characterization of individual GaN nanowires

Authors :
E. Cimpoiasu
Aric W. Sanders
Eric Stern
Ryan Munden
Robert F. Klie
James F. Klemic
J. Hyland
D. Kretzschmar
Mark A. Reed
Guosheng Cheng
Source :
63rd Device Research Conference Digest, 2005. DRC '05..
Publication Year :
2005
Publisher :
IEEE, 2005.

Abstract

The authors performed a thorough electrical characterization of hot-wall-CVD fabricated GaN nanowires (NWs) by studying over 500 single NW devices, and have extracted the growth parameters responsible for wire quality. Wires were grown by the vapor-liquid-solid mechanism

Details

Database :
OpenAIRE
Journal :
63rd Device Research Conference Digest, 2005. DRC '05.
Accession number :
edsair.doi...........768586a85db85c66cf67db50f7575275
Full Text :
https://doi.org/10.1109/drc.2005.1553138