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Properties of SIMOX and bonded SOI material
- Source :
- Microelectronic Engineering. 28:391-397
- Publication Year :
- 1995
- Publisher :
- Elsevier BV, 1995.
-
Abstract
- Presently the most prominent silicon materials considered for silicon-on-insulator (SOI) technologies are SIMOX (separation by implanted oxygen) and bonded SOI. The present paper will review recent developments for these two types of approaches for SOI materials with special emphasis on the progress in obtaining ultra thin bonded SOI layers by local plasma etching or an etch-back procedure involving stress compensated boron-germanium doped etch-stop layers.
- Subjects :
- Materials science
Plasma etching
Silicon
business.industry
Doping
chemistry.chemical_element
Silicon on insulator
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Stress (mechanics)
chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 01679317
- Volume :
- 28
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering
- Accession number :
- edsair.doi...........765d98d9a84f7c833a117cad56cbca53