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Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)
- Source :
- Journal of Electronic Materials. 28:528-531
- Publication Year :
- 1999
- Publisher :
- Springer Science and Business Media LLC, 1999.
-
Abstract
- Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image.
- Subjects :
- Materials science
Photoluminescence
Condensed matter physics
Solid-state physics
Substrate (electronics)
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Spectral line
Electronic, Optical and Magnetic Materials
Quantum dot
Microscopy
Materials Chemistry
Electrical and Electronic Engineering
Excitation
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 28
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........76511317c06c09393fa4749a5e11912c