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A UWB SiGe LNA for multi-band applications with self-healing based on DC extraction of device characteristics
- Source :
- 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
- Publication Year :
- 2011
- Publisher :
- IEEE, 2011.
-
Abstract
- We present an ultra-wideband, Low Noise Amplifier (LNA) implemented in a Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) technology. This SiGe LNA covers a frequency range of 8–18 GHz and achieves a peak gain of 15.6 dB at nominal bias and a nominal OIP3 of 3 dBm at 13 GHz. The Noise Figure (NF) of the LNA is 3.6–7.9 dB across band, and it consumes 7 mA from a 3.3 V supply. This LNA incorporates bias control knobs for circuit ‘self-healing’ to compensate for process-induced (or other) variations in performance metrics. Process variations are detected using a companion source measure unit (SMU) test circuit that gathers DC device information to determine the healing to be applied.
Details
- Database :
- OpenAIRE
- Journal :
- 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
- Accession number :
- edsair.doi...........763e3d042426e33e56c9f13baa8f1538