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Large‐Scale Growth and Field‐Effect Transistors Electrical Engineering of Atomic‐Layer SnS 2
- Source :
- Small. 15:1904116
- Publication Year :
- 2019
- Publisher :
- Wiley, 2019.
-
Abstract
- 2D layers of metal dichalcogenides are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. 2D SnS2 nanosheets with a bandgap of ≈2.6 eV have been attracting intensive attention as one potential candidate for modern electrocatalysis, electronic, and/or optoelectronic fields. However, the controllable growth of large-size and high-quality SnS2 atomic layers still remains a challenge. Herein, a salt-assisted chemical vapor deposition method is provided to synthesize atomic-layer SnS2 with a large crystal size up to 410 µm and good uniformity. Particularly, the as-fabricated SnS2 nanosheet-based field-effect transistors (FETs) show high mobility (2.58 cm2 V-1 s-1 ) and high on/off ratio (≈108 ), which is superior to other reported SnS2 -based FETs. Additionally, the effects of temperature on the electrical properties are systematically investigated. It is shown that the scattering mechanism transforms from charged impurities scattering to electron-phonon scattering with the temperature. Moreover, SnS2 can serve as an ideal material for energy storage and catalyst support. The high performance together with controllable growth of SnS2 endow it with great potential for future applications in electrocatalysis, electronics, and optoelectronics.
- Subjects :
- Materials science
Band gap
business.industry
Scattering
Transistor
02 engineering and technology
General Chemistry
Chemical vapor deposition
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
law.invention
Biomaterials
Crystal
law
Optoelectronics
General Materials Science
Field-effect transistor
Electronics
0210 nano-technology
business
Biotechnology
Nanosheet
Subjects
Details
- ISSN :
- 16136829 and 16136810
- Volume :
- 15
- Database :
- OpenAIRE
- Journal :
- Small
- Accession number :
- edsair.doi...........75a13a4c69acb4459ce559340881b680