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Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz
- Source :
- Applied Physics Letters. 109:101104
- Publication Year :
- 2016
- Publisher :
- AIP Publishing, 2016.
-
Abstract
- The dynamic characteristics of III-nitride multi-quantum well laser diodes (LDs) emitting at 410 nm were investigated. LDs were grown on semipolar (202¯1¯) bulk GaN substrates and fabricated into devices with cavity lengths ranging from 900 nm to 1800 nm. A 3-dB bandwidth of 5 GHz and 5 Gbit/s direct modulation with on-off keying were demonstrated, which were limited by the bandwidth of the photodetector used for the measurements. The differential gain of the LDs was determined to be 2.5 ± 0.5 × 10−16 cm2 by comparing the slope efficiency for different cavity lengths. Analysis of the frequency response showed that the K-factor, the gain compression factor, and the intrinsic maximum bandwidth were 0.33 ns, 7.4 × 10−17 cm3, and 27 GHz, respectively.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
Differential gain
business.industry
Bandwidth (signal processing)
Slope efficiency
Photodetector
Gain compression
02 engineering and technology
021001 nanoscience & nanotechnology
Laser
01 natural sciences
Amplitude-shift keying
law.invention
Optics
law
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Diode
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 109
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........7515c9a5610e56aa54a37db1b9e61d2f