Reversible High-Speed High-Resolution Imaging in Amorphous Semiconductors

Energetic processes have been described for fast and controllable ordering and disordering of amorphous semiconductors.(1, 2, 3, 4, 5) Concomitant with these changes are alterations of various physical parameters, all of which we use for the temporary or permanent storage and display of information (6). The present paper reports on some physical characteristics associated with photostructural changes reflecting imaging processes in amorphous materials.