Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process

The recognized need for devices that can perform under severe operating conditions and recent advances in the growth of diamond films at moderate temperatures and low pressures has generated great interest in the exploitation of the many unique properties of diamond for solid state devices. Among these properties are high strength, high thermal conductivity, high band gap energy, high carrier mobility, and high resistance to degradation by exposure to radiation, heat, and corrosives[1,2].