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Rapid, Low-Temperature Growth of Sub-10 nm Silica Nanowires through Plasma Pretreatment for Antireflection Applications

Authors :
Bo-Wen Huang
Hong-Yi Lee
Jiann Shieh
Yi-Ci Tsai
Source :
ACS Applied Nano Materials. 2:2836-2843
Publication Year :
2019
Publisher :
American Chemical Society (ACS), 2019.

Abstract

Silica nanowires were rapidly grown at the Pt–Si eutectic temperature (830 °C) through active oxidation. Because a silica source with a high amount of SiO is required for high solubility in a small droplet, we developed a plasma treatment that was conducted on a platinum thin film prior to nanowire growth to incorporate a high amount of silica source into the droplets. After the samples were pretreated with hydrogen and argon plasma, sub-10 nm silica nanowires were successfully grown through 1.8 nm Pt thin films on silicon wafers. This is an effective method to grow thin nanowires on nanopillars with low surface reflection at low temperatures.

Details

ISSN :
25740970
Volume :
2
Database :
OpenAIRE
Journal :
ACS Applied Nano Materials
Accession number :
edsair.doi...........7437e4609d30671824c1e7fbbb0f7c11
Full Text :
https://doi.org/10.1021/acsanm.9b00301