Evolution between Volatile and Nonvolatile Resistive Switching Behaviors in Ag/TiOx/CeOy/F-Doped SnO2 Nanostructure-Based Memristor Devices for Information Processing Applications

Subjects

Subjects :

General Materials Science

Details

ISSN :

25740970

Volume :

6

Database :

OpenAIRE

Journal :

ACS Applied Nano Materials

Accession number :

edsair.doi...........742d9e93ffdffe4678a76ef53ba7b9b8

Full Text :

https://doi.org/10.1021/acsanm.3c01282