Spin-flip Raman scattering in p-type semiconductors

Surveys the experimental studies and related analyses of such processes in p-type ZnTe, GaP, SiC and InSb. The observed scattering mechanisms include free heavy-hole spin flip, spin flip of holes bound to shallow acceptors spin flip of photoexcited electrons, and several exciton processes. A variety of photoexcited transitions which yield spin temperatures up to 300K in systems with lattice temperatures below 2K. Multiple spontaneous spin-flip scattering and spin-flip plus phonon scattering mechanisms are discussed.