Reduced threshold current and enhanced mode selectivity in InGaN MQW lasers with deeply etched air/nitride distributed Bragg reflector

Authors :: Richard V. Penty
L.J. Sargent
Ghulam Hasnain
Ian H. White
Judy M Rorison
Peter J Heard
C Marinelli
Richard P. Schneider
Source :: LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: Single mode operation over an extended current range and reduced threshold current is obtained from InGaN MQW lasers by introducing two pairs of air/nitride quarter wavelength layers at one end of the cavity.

Subjects :: Materials science
business.industry
Wide-bandgap semiconductor
Single-mode optical fiber
Physics::Optics
Nitride
Laser
Distributed Bragg reflector
law.invention
Wavelength
Optics
Distributed Bragg reflector laser
law
Etching (microfabrication)
Optoelectronics
business

Database :: OpenAIRE
Journal :: LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080)
Accession number :: edsair.doi...........741235e24c02c0944933001941b112d2
Full Text :: https://doi.org/10.1109/leos.2000.894011

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