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Geometric Design of Confined Conducting Filaments in Resistive Random Access Memory by Al2O3 Nanodome-Shaped Arrays (NDSAs) via Glancing-Angle Deposition Technology Toward Neuromorphic Computing
- Source :
- ACS Materials Letters. 3:1757-1766
- Publication Year :
- 2021
- Publisher :
- American Chemical Society (ACS), 2021.
-
Abstract
- Resistive random access memory (RRAM) is vital to neuromorphic computing applications. However, filamentary RRAM cells are affected by transitions from abrupt switching to analog switching. In this...
Details
- ISSN :
- 26394979
- Volume :
- 3
- Database :
- OpenAIRE
- Journal :
- ACS Materials Letters
- Accession number :
- edsair.doi...........73d1247fce4d1d295505ffbeea630f1c
- Full Text :
- https://doi.org/10.1021/acsmaterialslett.1c00513