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Fano interference of the Raman phonon in heavily boron‐doped diamond films grown by chemical vapor deposition
- Source :
- Applied Physics Letters. 66:616-618
- Publication Year :
- 1995
- Publisher :
- AIP Publishing, 1995.
-
Abstract
- A series of boron‐doped polycrystalline diamond films grown by direct current and microwave plasma deposition was studied with Raman and infrared (IR) absorption spectroscopy. A Fano line shape is observed in the Raman spectra for films with a boron concentration in a narrow range near 1021 cm−3. The appearance of the Fano line shape is correlated with the disappearance of discrete electronic transitions of the boron acceptor observed in the IR spectrum and the shift of the broadened peak to lower energy. The Fano interaction is attributed to a quantum mechanical interference between the Raman phonon (0.165 eV) and transitions from the broadened impurity band to continuum states composed of excited acceptor and valence band states.
- Subjects :
- Fano factor
Materials science
Physics and Astronomy (miscellaneous)
Absorption spectroscopy
Phonon
Analytical chemistry
chemistry.chemical_element
Chemical vapor deposition
Molecular physics
Acceptor
Condensed Matter::Materials Science
symbols.namesake
chemistry
Condensed Matter::Superconductivity
symbols
Raman spectroscopy
Spectroscopy
Boron
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 66
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........73cac8738b0e4d7c04b87067eefa9887