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N-face GaN (000-1) Films with Hillock-Free Smooth Surfaces Grown by Group-III-Source Flow-Rate Modulation Epitaxy

Authors :
C.H. Lin
H. Yamamoto
T. Akasaka
Source :
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Publication Year :
2015
Publisher :
The Japan Society of Applied Physics, 2015.

Subjects

Subjects :
Materials science
Group (periodic table)
Modulation
business.industry
Face (geometry)
Optoelectronics
business
Epitaxy
Hillock
Volumetric flow rate

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........73989124e3135ef681efe82ed9f0d3a0
Full Text :
https://doi.org/10.7567/ssdm.2015.ps-8-7
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