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Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening
- Source :
- Journal of Applied Physics. 125:235705
- Publication Year :
- 2019
- Publisher :
- AIP Publishing, 2019.
-
Abstract
- We investigate the effects of surface tunneling on electrostatics and transport properties of two-dimensional electron gases (2DEGs) in undoped Si/SiGe heterostructures with different 2DEG depths. By varying the gate voltage, four stages of density-mobility dependence are identified with two density saturation regimes observed, which confirms that the system transitions between equilibrium and nonequilibrium. Mobility is enhanced with an increasing density at low biases and, counterintuitively, with a decreasing density at high biases as well. The density saturation and mobility enhancement can be semiquantitatively explained by a surface tunneling model in combination with a bilayer screening theory.
- Subjects :
- 010302 applied physics
Electron mobility
Materials science
Condensed matter physics
Bilayer
General Physics and Astronomy
Non-equilibrium thermodynamics
Heterojunction
02 engineering and technology
Electron
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Electrostatics
01 natural sciences
0103 physical sciences
0210 nano-technology
Saturation (chemistry)
Quantum tunnelling
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 125
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........738e3c188bf612e9c8ce715d15decc8a