Transmission-Type Radio-Frequency Single-Electron Transistor with In-Plane-Gate Single-Electron Transistor

We have fabricated an in-plane-gate (IPG) single-electron transistor (SET) on an AlGaAs/GaAs wafer and characterized it by measuring a transmitted signal from the transmission-type radio-frequency SET (RF-SET) electrometer system consisting of a resonant tank (LC) circuit and a SET. By measuring the frequency characteristics, we estimate the resonance frequency of the system to be 480 MHz at temperature T=4.2 K. We find that, driving the SET at this frequency, the transmitted signal depends on the gate voltage, and successfully demonstrates the measuring operation. However, the difference between the transmitted signals at the on- and off-gate voltages of the SET was measured to be 0.15 dB, which is relatively small, and it is necessary to optimize the electrical environment of the system by improving the signal-to-noise ratio.