Back to Search Start Over

Process Optimization of GaN Nanorods Fabricated Using CH4/H2/SF6 Inductively Coupled Plasma Etch Technology

Authors :
M. A. M. Al-Suleiman
Y. Al-Hadeethi
A. Waag
Source :
Science of Advanced Materials. 7:2523-2527
Publication Year :
2015
Publisher :
American Scientific Publishers, 2015.

Subjects

Subjects :
General Materials Science

Details

ISSN :
19472943 and 19472935
Volume :
7
Database :
OpenAIRE
Journal :
Science of Advanced Materials
Accession number :
edsair.doi...........728b796951d2deffaae68bb70c591871

Tools

Authors Abstract Subjects Details