Total Ionizing Dose Effects and Bias Dependence in Selected Bipolar Devices

Total dose test results are presented for two high-voltage transistors and three bipolar integrated circuits. Circuit tests were done at a dose rate of 0.005 rad(Si)/s because the devices are sensitive to enhanced damage at low dose rate (ELDRS). An unusual response was observed for one operational amplifier where the sign of the input bias current reversed after it was exposed to approximately 10 krad(Si) at low dose rate.