Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

MLA

Vassil Palankovski, et al. “Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors.” Japanese Journal of Applied Physics, vol. 51, May 2012, p. 054102. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........72368187d870f9bbe6b4ac8360082bec&authtype=sso&custid=ns315887.

APA

Vassil Palankovski, A. Alexewicz, Nicolas Grandjean, Jean-François Carlin, Erich Gornik, Jan Kuzmik, S. Vitanov, Sylvain Delage, Clemens Ostermaier, Gottfried Strasser, Christian Dua, & Dionyz Pogany. (2012). Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors. Japanese Journal of Applied Physics, 51, 054102.

Chicago

Vassil Palankovski, A. Alexewicz, Nicolas Grandjean, Jean-François Carlin, Erich Gornik, Jan Kuzmik, S. Vitanov, et al. 2012. “Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors.” Japanese Journal of Applied Physics 51 (May): 054102. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........72368187d870f9bbe6b4ac8360082bec&authtype=sso&custid=ns315887.