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Single-crystal GaN/Gd2O3/GaN heterostructure

Authors :
Ahmet Refik Kortan
Minghwei Hong
A.Y. Cho
Hock M. Ng
J.P. Mannaerts
K. A. Anselm
J.-I. Chyi
S. N. G. Chu
Chien-Chieh Lee
J. Kwo
Source :
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:1274
Publication Year :
2002
Publisher :
American Vacuum Society, 2002.

Abstract

Heteroepitaxy of single-crystal Gd2O3 on GaN (with a wurtzite hexagonal close-packed (hcp) structure) and single-crystal GaN on Gd2O3 was achieved. In situ reflection high-energy electron diffraction reveals a sixfold symmetry in the in-plane epitaxy of the rare earth oxide on GaN and also in the overgrowth of GaN on the oxide. Single-crystal x-ray diffraction measurements find that these single-crystal oxide films are indeed the high temperature hexagonal phases of the sesquioxides, stabilized by the GaN substrate epitaxy. Despite a large mismatch in the lattice constant, the fully relaxed oxide films are of excellent structural quality. The x-ray diffraction results revealed that the GaN grown on the rare earth oxide is a single-crystal and has the same crystallographic hcp structure as the underlying GaN. The structures of both layers of GaN were also studied by cross section transmission electron microscopy.

Details

ISSN :
0734211X
Volume :
20
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Accession number :
edsair.doi...........71e3bffebf142324b4661b48f650851f
Full Text :
https://doi.org/10.1116/1.1473178