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A novel model of the gate current in heterojunction FETs
- Source :
- IEEE Transactions on Electron Devices. 40:846-851
- Publication Year :
- 1993
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1993.
-
Abstract
- The authors present a model of the gate current in heterojunction FETs that takes into account two-dimensional electron gas effects at the heterojunction interface. The gate current results from tunnel and thermionic contributions. This model takes into account a number of technological parameters such as heterojunction barrier height, threshold voltage, gate length, and temperature. It has been tested against experimental measurements of gate current in AlGaAs/GaAs MISFETs at various temperatures. The agreement has been found quite satisfactory in a large range of temperatures. >
- Subjects :
- Materials science
business.industry
Heterojunction
Thermionic emission
Semiconductor device
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Electronic, Optical and Magnetic Materials
Threshold voltage
Condensed Matter::Materials Science
Computer Science::Emerging Technologies
Gate oxide
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
Electric current
business
Quantum tunnelling
Subjects
Details
- ISSN :
- 00189383
- Volume :
- 40
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........71ce85d2d8d418d0f0e59d80260ea332
- Full Text :
- https://doi.org/10.1109/16.210189