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Properties of Al-doped ZnO Transparent Conducting Oxide Films Deposited with Ar Flow Rate by RF Magnetron Sputtering
- Source :
- Journal of the Korean Vacuum Society. 19:206-210
- Publication Year :
- 2010
- Publisher :
- The Korean Vacuum Society, 2010.
-
Abstract
- Al-doped ZnO thin films were deposited with various Ar flow rate by RF magnetron sputtering, and theire properties were studied. A high-quality thin film was obtained by controlling the Ar flow rate, and the influence of the Ar flow rate on the Al-doped ZnO thin film was confirmed. In all Al-doped ZnO thin films, light transmittance had above 80%. Through Hall measurement and X-ray photoelectron spectrometer, the sample of 60 sccm, which had the lowest resistivity, showed the lower Al concentration. This result was attributed to oxygen vacancy rather than Al concentration.
- Subjects :
- Materials science
Materials Science (miscellaneous)
Doping
technology, industry, and agriculture
Analytical chemistry
Oxide
Sputter deposition
Condensed Matter Physics
Volumetric flow rate
chemistry.chemical_compound
chemistry
Electrical resistivity and conductivity
Hall effect
Transmittance
Electrical and Electronic Engineering
Physical and Theoretical Chemistry
Thin film
Subjects
Details
- ISSN :
- 12258822
- Volume :
- 19
- Database :
- OpenAIRE
- Journal :
- Journal of the Korean Vacuum Society
- Accession number :
- edsair.doi...........71b82110481d25624ede8f92affd5d07