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Designer Ge quantum dots on Si: A heterostructure configuration with enhanced optoelectronic performance

Authors :
Pei-Wen Li
Wei-Ting Lai
C. C. Wang
Thomas F. George
Ming Hao Kuo
Source :
Applied Physics Letters. 101:223107
Publication Year :
2012
Publisher :
AIP Publishing, 2012.

Abstract

An otherwise random, self-assembly of Ge quantum dots (QDs) on Si has been controlled by nano-patterning and oxidation to produce QDs with desired sizes, locations, and depths of penetration into the Si substrate. A heterostructure consisting of a thin amorphous interfacial oxide between the Ge QD and the Si substrate is shown to improve crystalline quality by de-coupling the lattice-matching constraint. A low dark current density of 1.1 μA/cm2 and a high photocurrent enhancement up to 35 000 and 1500, respectively, for 1.5 mW incident illumination at 850 nm and 1160 nm was measured on our Ge QD-based metal-oxide-semiconductor photodiodes.

Details

ISSN :
10773118 and 00036951
Volume :
101
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........71b044bc146a9319637811e52e309ab0
Full Text :
https://doi.org/10.1063/1.4768292