Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane

MLA

V. V. Ratnikov, et al. “Defects and Stresses in MBE-Grown GaN and Al0.3Ga0.7N Layers Doped by Silicon Using Silane.” Crystallography Reports, vol. 58, Dec. 2013, pp. 1023–29. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........719e3de809478d1a43f0c20787c0abf9&authtype=sso&custid=ns315887.

APA

V. V. Ratnikov, R. N. Kyutt, K. S. Zhuravlev, V. Yu. Davydov, Timur V. Malin, Alexander N. Smirnov, & M. P. Shcheglov. (2013). Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane. Crystallography Reports, 58, 1023–1029.

Chicago

V. V. Ratnikov, R. N. Kyutt, K. S. Zhuravlev, V. Yu. Davydov, Timur V. Malin, Alexander N. Smirnov, and M. P. Shcheglov. 2013. “Defects and Stresses in MBE-Grown GaN and Al0.3Ga0.7N Layers Doped by Silicon Using Silane.” Crystallography Reports 58 (December): 1023–29. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........719e3de809478d1a43f0c20787c0abf9&authtype=sso&custid=ns315887.