Single-junction GaSb and tandem GaSb/InGaAsSb and AlGaAsSb/GaSb thermophotovoltaic cells

Authors :: Maxim Z. Shvarts
S.V. Sorokina
V.P. Khvostikov
V.D. Rumyantsev
V. M. Andreev
Source :: Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: The advanced technology of the single- and dual-junction TPV cells, based on GaSb was developed. Photocurrent density as high as 54 mA/cm/sup 2/ under AM0 spectrum, efficiencies of 12.8% (AM1.5D, 120 suns) and 19.1% under cut-off AM0-spectrum (/spl lambda/=900-1800 nm) were obtained. The deviations of V/sub oc/ and FF in the GaSb 1 cm/sup 2/ cells are in the following ranges: V/sub oc/=0.42-0.45 V and FF=0.7-0.72 at photocurrent of 1 A. The cells of 2 cm/sup 2/ in area generate photocurrent up to 9 A at V/sub oc/=0.52 V. Tandem InGaAsSb (0.55 eV)/GaSb cells with V/sub oc/=0.65 V at I/sub sc/1A/cm/sup 2/ were developed. Tandem AlGaAsSb(1 eV)/GaSb cells with expected V/sub oc/=1.1 V at I/sub sc/=1A/cm/sup 2/ are under development as well.

Subjects :: Photocurrent
chemistry.chemical_compound
Materials science
chemistry
Tandem
business.industry
Thermophotovoltaic
Photoconductivity
Crystalline materials
Optoelectronics
business
Indium gallium arsenide
Gallium arsenide

Database :: OpenAIRE
Journal :: Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
Accession number :: edsair.doi...........71998d17c8bd16e96fcd30975b8c57db
Full Text :: https://doi.org/10.1109/pvsc.2000.916120

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