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Fabrication of Nano-scale Electronic Devices Based on Single-layer Graphene
- Source :
- Journal of the Vacuum Society of Japan. 53:94-100
- Publication Year :
- 2010
- Publisher :
- The Vacuum Society of Japan, 2010.
-
Abstract
- We review our recent experiments on the fabrication of nano-electronic devices in single-layer graphene. A graphene nanoribbon device was fabricated by conducting local anodic oxidation lithography using tapping-mode atomic force microcsope. The conductance of the graphene nanoribbon at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to the lateral confinement of charge carriers. A single quantum dot was fabricated by using the conventional electron beam lithography combined with plasma etching of the graphene layer. The quantum dot works as a single-electron transistor, which shows Coulomb blockade characteristics. These results suggest possibilities of the future application of the nano-electronic devices based on graphene.
- Subjects :
- Materials science
Graphene
Physics::Optics
Coulomb blockade
Nanotechnology
Surfaces and Interfaces
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Computer Science::Other
law.invention
Quantum dot
law
General Materials Science
Charge carrier
Physics::Chemical Physics
Bilayer graphene
Instrumentation
Lithography
Spectroscopy
Electron-beam lithography
Graphene nanoribbons
Subjects
Details
- ISSN :
- 18824749 and 18822398
- Volume :
- 53
- Database :
- OpenAIRE
- Journal :
- Journal of the Vacuum Society of Japan
- Accession number :
- edsair.doi...........712f26ebbc70e561429303ea9efd0dc7