Photoablative etching of Langmuir-Blodgett films

The photoablative properties of a variety of Langmuir-Blodgett (LB) films on silicon and quartz are reported at 193 nm and at 248 nm. The etch rate is observed to change for very thin films depending on the substrate material. No spectral changes have been observed in the remaining material, suggesting no degradation, and this technique appears to be viable for use in the lithography of LB films.