Effect of superstoichiometric components on the spectral and kinetic characteristics of the luminescence of ZnSe crystals with isovalent impurities

The spectral and kinetic parameters of the X-ray luminescence of ZnSe crystals doped with Zn, Se, and Te were investigated during the growth process at temperatures in the range 80–500 K, and also after annealing in Zn vapor. ZnSe crystals grown from a stoichiometric mixture, or mixture containing chalcogenide impurities, typically produce the minimum level of afterglow and a rapid rise of X-ray luminescence, as well as a shift of its peak from the infrared region toward shorter wavelengths after annealing in zinc. ZnSe crystals grown from material with excess of Zn have a relatively low X-ray luminescence yield and a substantial level of afterglow. It is assumed that the growth of Te-activated crystals is accompanied by the development of thermally stable complexes of the form VZnTeSe that act as radiative recombination centers. The introduction of excess Zn into the initial mixture produces a reduction in the concentration of VZn and, hence, in the concentration of radiative recombination centers. It is shown that, for free-electron concentrations n 1018 cm−3, the time constant decreases with increasing n, which cannot be explained in terms of the simple model. It is suggested that radiative recombination centers of a new type are produced as a result of prolonged annealing in Zn vapor.