A Deep Level Transient Spectroscopy Study of Hole Traps in GexSe1−x-based Layers for Ovonic Threshold Switching Selectors

Authors :: Po-Chun Hsu
P. Carolan
Hugo Bender
Romain Delhougne
Andre Stesmans
Ludovic Goux
Gouri Sankar Kar
Eddy Simoen
Dennis Lin
Source :: ECS Journal of Solid State Science and Technology. 9:044006
Publication Year :: 2020
Publisher :: The Electrochemical Society, 2020.

Subjects :: Materials science
Deep-level transient spectroscopy
business.industry
Optoelectronics
business
Electronic, Optical and Magnetic Materials

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